Product Information

2PC4081R

2PC4081R electronic component of Nexperia

Datasheet
TRANSISTOR, NPN, 50V, 100MHZ, SOT-323-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2377 ea
Line Total: USD 1.19

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1

Stock Image

2PC4081R
Nexperia

5 : USD 0.2377
100 : USD 0.0878
1000 : USD 0.055
3000 : USD 0.0372
9000 : USD 0.0346
24000 : USD 0.0316

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

2PC4081 NPN general-purpose transistor Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT323 (SC-70) plastic package. The PNP complement is 2PA1576. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) 1.3 Applications General-purpose switching Small signal amplification 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2PC4081Q SC-70 plastic surface mounted package 3 leads SOT323 2PC4081R 2PC4081SNXP Semiconductors 2PC4081 NPN general-purpose transistor 4. Marking Table 3. Marking codes 1 Type number Marking code 2PC4081Q Z*Q 2PC4081R Z*R 2PC4081S Z*S 1 * = -: made in Hong Kong * = t: made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 7 V EBO I collector current (DC) - 150 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C -200 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 65 +150 C amb 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from --625 K/W th(j-a) junction to ambient 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2PC4081 6 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 17 November 2009 2 of 7

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