BAS21VD Nexperia

BAS21VD High-voltage switching diodes 1 August 2013 Product data sheet 1. General description Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t 50 ns rr Low capacitance: C 5 pF d Reverse voltage: V 200 V R AEC-Q101 qualified Repetitive peak reverse voltage: V 250 V RRM Repetitive peak forward current: I 1 A FRM Small SMD plastic package 3. Applications High-voltage switching in surface-mounted circuits Automotive Communication 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I forward current pulsed t 300 s 0.02 1 - - 200 mA F p V reverse voltage - - 200 V R Per diode I reverse current V = 200 V T = 25 C pulsed - 25 100 nA R R amb t 300 s 0.02 p t reverse recovery time I = 30 mA I = 30 mA I = 3 mA - 16 50 ns rr F R R(meas) R = 100 T = 25 C L amb 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Scan or click this QR code to view the latest information for this product SOT457NXP Semiconductors BAS21VD High-voltage switching diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) 6 5 4 6 5 4 2 K2 cathode (diode 2) 3 K3 cathode (diode 3) 1 2 3 4 A3 anode (diode 3) TSOP6 (SOT457) 1 2 3 5 A2 anode (diode 2) 006aab241 6 A1 anode (diode 1) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS21VD TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BAS21VD B5 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V repetitive peak reverse voltage - 250 V RRM V reverse voltage - 200 V R I forward current pulsed t 300 s 0.02 1 - 200 mA F p I repetitive peak forward current t 1 ms 25 % - 1 A FRM p I non-repetitive peak forward t = 10 s T = 25 C square wave - 16 A FSM p j(init) current t = 100 s T = 25 C square wave - 8 A p j(init) t = 10 ms T = 25 C square wave - 2 A p j(init) BAS21VD All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 1 August 2013 2 / 11