BAS45A Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet 1996 Mar 13 Supersedes data of June 1994 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION Continuous reverse voltage: Epitaxial medium-speed switching diode with a low leakage current in a max. 125 V hermetically-sealed glass SOD68 (DO-34) package. Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA k a handbook, halfpage Switching time: typ. 1.5 s. MAM156 APPLICATION Fig.1 Simplified outline (SOD68 DO-34) and symbol. Low leakage current applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V repetitive peak reverse voltage 125 V RRM V continuous reverse voltage 125 V R I continuous forward current see Fig.2 note 1 250 mA F I repetitive peak forward current 625 mA FRM I non-repetitive peak forward current square wave T = 25 C prior to FSM j surge see Fig.4 t = 1 s 4 A p t = 1 ms 1 A p t = 1 s 0.5 A p P total power dissipation T = 25 C 300 mW tot amb T storage temperature 65 +175 C stg T junction temperature 175 C j Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 2