BAV199W,115

BAV199W Low-leakage double diode 4 November 2020 Product data sheet 1. General description Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. 2. Features and benefits Small plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 s Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. AEC-Q101 qualified 3. Applications Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse voltage T = 25 C - - 75 V R j I reverse current V = 75 V T = 25 C - 0.003 5 nA R R j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode (diode 1) 3 K1 A2 2 K2 cathode (diode 2) 3 K1, A2 cathode (diode 1) and anode (diode 2) A1 K2 1 2 aaa-032326 SC-70 (SOT323)Nexperia BAV199W Low-leakage double diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAV199W SC-70 plastic, surface-mounted package 3 leads 1.3 mm pitch 2 mm x SOT323 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 JY% BAV199W 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V reverse voltage T = 25 C - 75 V R j V repetitive peak reverse - 85 V RRM voltage I forward current T = 90 C T = 25 C single diode 1 - 135 mA F sp amb loaded T = 90 C T = 25 C double diode 1 - 110 mA sp amb loaded I repetitive peak forward T = 25 C - 500 mA FRM j current I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) P total power dissipation single diode loaded T = 90 C 1 - 150 mW tot sp double diode loaded T = 90 C - 250 mW sp T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 500 K/W th(j-a) junction to ambient BAV199W All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 4 November 2020 2 / 10