Product Information

BCW72

BCW72 electronic component of Nexperia

Datasheet
TRANSISTOR, NPN, SOT-23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.0876 ea
Line Total: USD 43.8

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 500
Multiples : 1

Stock Image

BCW72
Nexperia

500 : USD 0.0857
1500 : USD 0.0816

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Device Marking
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Factor Max
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vcbo
LoadingGif

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW71 BCW72 NPN general purpose transistors Product data sheet 1999 Apr 19 Supersedes data of 1997 Mar 06 NXP Semiconductors Product data sheet NPN general purpose transistors BCW71 BCW72 FEATURES PINNING Low current (100 mA) PIN DESCRIPTION Low voltage (45 V) 1 base Low noise. 2 emitter 3 collector APPLICATIONS General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 NPN transistor in a SOT23 plastic package. 3 PNP complements: BCW69 and BCW70. 1 MARKING 2 (1) TYPE NUMBER MARKING CODE 1 2 BCW71 K1 Top view MAM255 BCW72 K2 Note 1. = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 50 V CBO V collector-emitter voltage open base I = 2 mA 45 V CEO C V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 200 mA BM P total power dissipation T 25 C 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb 1999 Apr 19 2

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