BSS84AKMB,315 Nexperia

BSS84AKMB 50 V, single P-channel Trench MOSFET 27 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1 kV Ultra thin package profile with 0.37 mm height 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -50 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -230 mA D GS amb Static characteristics R drain-source on-state V = -10 V I = -100 mA T = 25 C - 4.5 7.5 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia BSS84AKMB 50 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKMB DFN1006B-3 plastic, leadless ultra small plastic package 3 solder lands 0.35 SOT883B mm pitch 1.0 mm x 0.6 mm x 0.37 mm body 7. Marking Table 4. Marking codes Type number Marking code BSS84AKMB 0000 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description BSS84AKMB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 27 October 2020 2 / 14