X-On Electronics has gained recognition as a prominent supplier of BUK7Y12-100EX mosfet across the USA, India, Europe, Australia, and various other global locations. BUK7Y12-100EX mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK7Y12-100EX

BUK7Y12-100EX electronic component of Nexperia
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See Product Specifications
Part No.BUK7Y12-100EX
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-channel 100 V 12 mo FET
Datasheet: BUK7Y12-100EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8381 ea
Line Total: USD 1.84

Availability - 1455
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1399 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4145
10 : USD 1.288
100 : USD 1.173
250 : USD 1.0948
500 : USD 1.0051
1000 : USD 0.8843
3000 : USD 0.8441
9000 : USD 0.8326

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the BUK7Y12-100EX MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BUK7Y12-100EX MOSFET.

BUK7Y12-100E N-channel 100 V, 12 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 - - 85 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 238 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 8.1 12 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 21 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7Y12-100E N-channel 100 V, 12 m standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y12-100E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7Y12-100E 71210E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 - 85 A D mb GS T = 100 C V = 10 V Fig. 1 - 60 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 339 A DM mb p P total power dissipation T = 25 C Fig. 2 - 238 W tot mb T storage temperature -55 175 C stg BUK7Y12-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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