Product Information

BUK7Y2R0-40HX

BUK7Y2R0-40HX electronic component of Nexperia

Datasheet
MOSFET Mosfet2.0ohmsTrench9 AEC-Q101 qualified

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7365 ea
Line Total: USD 1.74

4508 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1451 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

BUK7Y2R0-40HX
Nexperia

1 : USD 1.307
10 : USD 1.294
25 : USD 1.252
100 : USD 1.211
250 : USD 1.1869
500 : USD 1.1869
1000 : USD 1.1869

4508 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BUK7Y2R0-40HX
Nexperia

1 : USD 1.7365
10 : USD 1.5295
100 : USD 1.3455
250 : USD 1.334
500 : USD 1.2305
1000 : USD 1.219
1500 : USD 1.1017
3000 : USD 1.0868
9000 : USD 1.0868

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
BUK7Y35-55B,115 electronic component of NXP BUK7Y35-55B,115

Trans MOSFET N-CH 55V 28.43A Automotive 5-Pin(4+Tab) LFPAK T/R
Stock : 0

BUK7Y38-100EX electronic component of Nexperia BUK7Y38-100EX

MOSFET N-channel 100 38 mo FET
Stock : 1400

BUK7Y41-80EX electronic component of Nexperia BUK7Y41-80EX

MOSFET N-channel 80 V 41 mo FET
Stock : 0

BUK7Y43-60EX electronic component of Nexperia BUK7Y43-60EX

MOSFET N-channel 60 V 43 mOhm MOSFET
Stock : 1425

BUK7Y4R4-40E electronic component of Nexperia BUK7Y4R4-40E

MOSFET, N-CH, 40V, 100A, LFPAK
Stock : 0

BUK7Y38-100E electronic component of Nexperia BUK7Y38-100E

MOSFET, N-CH, 100V, 30A, LFPAK
Stock : 0

BUK7Y3R5-40E,115 electronic component of Nexperia BUK7Y3R5-40E,115

MOSFET BUK7Y3R5-40E/LFPAK/REEL 7" Q1/
Stock : 417

BUK7Y2R5-40HX electronic component of Nexperia BUK7Y2R5-40HX

MOSFET Mosfet2.5ohmsTrench9 AEC-Q101 qualified
Stock : 1465

BUK7Y3R5-40HX electronic component of Nexperia BUK7Y3R5-40HX

MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:115W; Transistor Case Style:SOT-669; No. of Pins:4Pins; Operating Temperature Max:175C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
Stock : 6720

BUK7Y3R0-40HX electronic component of Nexperia BUK7Y3R0-40HX

N-channel Standard Level MOSFET 40V 3mO LFPAK56 T/R
Stock : 0

Image Description
BUK7M12-60EX electronic component of Nexperia BUK7M12-60EX

MOSFET BUK7M12-60E/MLFPAK/REEL 7" Q1/
Stock : 0

BSS138BKVL electronic component of Nexperia BSS138BKVL

MOSFET BSS138BK/TO-236AB/REEL 11" Q3/
Stock : 119936

IXTA8N70X2 electronic component of IXYS IXTA8N70X2

MOSFET 700V/8A Ultra Junct X2-Class MOSFET
Stock : 0

SSM3K72CFS,LF electronic component of Toshiba SSM3K72CFS,LF

MOSFET Small-signal Nch MOSFET ID: 0.15A
Stock : 0

IPD80R600P7ATMA1 electronic component of Infineon IPD80R600P7ATMA1

MOSFET LOW POWER_NEW
Stock : 1

SSM3J35AFS,LF electronic component of Toshiba SSM3J35AFS,LF

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 0

IPB120N06S403ATMA2 electronic component of Infineon IPB120N06S403ATMA2

MOSFET N-Ch 60V 120A D2PAK-2
Stock : 0

SSM3K345R,LF electronic component of Toshiba SSM3K345R,LF

MOSFET LowON Res MOSFET ID=4A VDSS=20V
Stock : 0

TPN1R603PL,L1Q electronic component of Toshiba TPN1R603PL,L1Q

MOSFET N-Ch 30V 2970pF 41nC 33A 30W
Stock : 0

TPHR9203PL,L1Q electronic component of Toshiba TPHR9203PL,L1Q

MOSFET N-Ch 30V 5800pF 81nC 280A 132W
Stock : 20000

BUK7Y2R0-40H N-channel 40 V, 2.0 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 217 W tot mbNexperia BUK7Y2R0-40H N-channel 40 V, 2.0 m standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 1.07 1.53 2 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 10.8 27.3 nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 21 - nC r S S GS V = 20 V Fig. 16 DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C Fig. 16 DS j BUK7Y2R0-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 9 May 2018 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted