X-On Electronics has gained recognition as a prominent supplier of NHDTA114ETVL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NHDTA114ETVL Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NHDTA114ETVL Nexperia

NHDTA114ETVL electronic component of Nexperia
NHDTA114ETVL Nexperia
NHDTA114ETVL Bipolar Transistors - Pre-Biased
NHDTA114ETVL  Semiconductors

Images are for reference only
See Product Specifications
Part No. NHDTA114ETVL
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 80V 100mA 150MHz 250mW Surface Mount TO-236AB
Datasheet: NHDTA114ETVL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2112 ea
Line Total: USD 0.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 10000
Multiples : 10000
10000 : USD 0.0604
30000 : USD 0.0548
50000 : USD 0.0513
100000 : USD 0.0484

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4613
10 : USD 0.3677
100 : USD 0.1952
500 : USD 0.1284
1000 : USD 0.0873
2000 : USD 0.0787
5000 : USD 0.0685

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4613
10 : USD 0.3677
100 : USD 0.1952
500 : USD 0.1284
1000 : USD 0.0873
2000 : USD 0.0787
5000 : USD 0.0685

0
Ship by Thu. 03 Jul to Mon. 07 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2112
10 : USD 0.1237
100 : USD 0.05
1000 : USD 0.0357
2500 : USD 0.0319
10000 : USD 0.0275
20000 : USD 0.0231
100000 : USD 0.0231

   
Manufacturer
Product Category
Package / Case
Series
Packaging
Part Status
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Resistor - Base R1
Resistor - Emitter Base R2
Dc Current Gain Hfe Min Ic Vce
Vce Saturation Max Ib Ic
Current - Collector Cutoff Max
Frequency - Transition
Power - Max
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NHDTA114ETVL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NHDTA114ETVL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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NHDTA114/124/144ET series 80 V, 100 mA PNP resistor-equipped transistors Rev. 1 26 June 2020 Product data sheet 1. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package NPN complement: k k Nexperia JEDEC NHDTA114ET 10 10 SOT23 TO-236AB NHDTC114ET NHDTA124ET 22 22 NHDTC124ET NHDTA144ET 47 47 NHDTC144ET 2. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Digital applications Cost saving alternative for BC856 series in digital applications Controlling IC inputs Switching loads 4. Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - -80 V CEO I output current - - -100 mA ONexperia NHDTA114/124/144ET series 80 V, 100 mA PNP resistor-equipped transistors 5. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND GND (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 6. Ordering information Table 4. Ordering information Type number Package Name Description Version NHDTA114ET TO-236AB plastic surface-mounted package 3 leads SOT23 NHDTA124ET NHDTA144ET 7. Marking Table 5. Marking Type number Marking code 1 NHDTA114ET QA% NHDTA124ET QD% NHDTA144ET QF% 1 % = placeholder for manufacturing site code NHDTA114 124 144ET SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet Rev. 1 26 June 2020 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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