X-On Electronics has gained recognition as a prominent supplier of NHDTA123JTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NHDTA123JTR Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NHDTA123JTR Nexperia

NHDTA123JTR electronic component of Nexperia
NHDTA123JTR Nexperia
NHDTA123JTR Bipolar Transistors - Pre-Biased
NHDTA123JTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. NHDTA123JTR
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 80V 100mA 150MHz 250mW Surface Mount TO-236AB
Datasheet: NHDTA123JTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2182 ea
Line Total: USD 0.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0845
6000 : USD 0.0709
15000 : USD 0.0602
30000 : USD 0.0567
75000 : USD 0.0532
150000 : USD 0.0501

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4749
10 : USD 0.3808
100 : USD 0.202
500 : USD 0.1329
1000 : USD 0.0903

0
Ship by Mon. 07 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4749
10 : USD 0.3808
100 : USD 0.202
500 : USD 0.1329
1000 : USD 0.0903

0
Ship by Thu. 03 Jul to Mon. 07 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2182
10 : USD 0.1317
100 : USD 0.0781
500 : USD 0.0546
1000 : USD 0.0409
3000 : USD 0.0352
6000 : USD 0.0318
9000 : USD 0.0273

   
Manufacturer
Product Category
Package / Case
Series
Packaging
Part Status
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Resistor - Base R1
Resistor - Emitter Base R2
Dc Current Gain Hfe Min Ic Vce
Vce Saturation Max Ib Ic
Current - Collector Cutoff Max
Frequency - Transition
Power - Max
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NHDTA123JTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NHDTA123JTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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NHDTA123JT/143ZT/114YT series 80 V, 100 mA PNP resistor-equipped transistors Rev. 1 26 June 2020 Product data sheet 1. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package NPN complement: k k Nexperia JEDEC NHDTA123JT 2.2 47 SOT23 TO-236AB NHDTC123JT NHDTA143ZT 4.7 47 NHDTC143ZT NHDTA114YT 10 47 NHDTC114YT 2. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Digital applications Cost saving alternative for BC856 series in digital applications Controlling IC inputs Switching loads 4. Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - -80 V CEO I output current - - -100 mA ONexperia NHDTA123JT/143ZT/114YT series 80 V, 100 mA PNP resistor-equipped transistors 5. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND GND (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 6. Ordering information Table 4. Ordering information Type number Package Name Description Version NHDTA123JT TO-236AB plastic surface-mounted package 3 leads SOT23 NHDTA143ZT NHDTA114YT 7. Marking Table 5. Marking Type number Marking code 1 NHDTA123JT QC% NHDTA143ZT QE% NHDTA114YT QB% 1 % = placeholder for manufacturing site code NHDTA123JT 143ZT 114YT SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet Rev. 1 26 June 2020 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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