Product Information

NX3008PBKV

NX3008PBKV electronic component of Nexperia

Datasheet
MOSFET,PP CH, 30V, 220MA, SOT666
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5608 ea
Line Total: USD 2.8

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1

Stock Image

NX3008PBKV
Nexperia

5 : USD 0.5608
10 : USD 0.3844
100 : USD 0.1729
500 : USD 0.1462
1000 : USD 0.1187
5000 : USD 0.0984

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Voltage Vgs Th Max
LoadingGif

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Additional Infomation About Product

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C - - -220 mA D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-200mA -2.8 4.1 DSon GS D resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . SOT666NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBKV SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBKV AB 1 % = placeholder for manufacturing site code NX3008PBKV All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 July 2011 2 of 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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