NX7002BKS

NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 330 mA D GS sp V = 10 V T = 25 C 1 - - 240 mA GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 200 mA T = 25 C - 2.2 2.8 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors NX7002BKS 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002BKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX7002BKS LT% 1 % = placeholder for manufacturing site code NX7002BKS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 12 May 2015 2 / 16