Product Information

PBLS2004D,115

PBLS2004D,115 electronic component of Nexperia

Datasheet
NXP Semiconductors Bipolar Transistors - Pre-Biased BISS LDSWITCH TAPE-7

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.616 ea
Line Total: USD 0.62

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

PBLS2004D,115
Nexperia

1 : USD 0.437
10 : USD 0.3082
100 : USD 0.1392
1000 : USD 0.1127
3000 : USD 0.0943
9000 : USD 0.0897
24000 : USD 0.0816
45000 : USD 0.0816
99000 : USD 0.0805

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBLS2004D 20 V PNP BISS loadswitch Rev. 01 23 June 2005 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough in Small Signal (BISS) transistor and NPN Resistor- CEsat Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low V (BISS) and resistor-equipped transistor in one package CEsat Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 PNP low V transistor CEsat V collector-emitter voltage open base - - - 20 V CEO I collector current (DC) - - -1A C 1 R collector-emitter saturation I = - 1A - 185 280 m CEsat C resistance I = - 100 mA B TR2 NPN resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor 1 (input) 15.4 22 28.6 k R2/R1 bias resistor ratio 0.8 1 1.2 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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