Product Information

PBLS4003Y

PBLS4003Y electronic component of Nexperia

Datasheet
TRANSISTOR, SWITCH, SOT-363
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.1926 ea
Line Total: USD 19.26

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 100
Multiples : 1

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PBLS4003Y
Nexperia

100 : USD 0.1926
500 : USD 0.1553
1000 : USD 0.1242
5000 : USD 0.1135

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Gain Bandwidth Ft Typ
Hfe Min
Module Configuration
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Transition Frequency Ft
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Additional Infomation About Product

PBLS4003Y PBLS4003V 40 V PNP BISS loadswitch Rev. 03 13 February 2009 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor and NPN Resistor- CEsat Equipped Transistor (RET) in one package. Table 1. Product overview Type number Package NXP JEITA PBLS4003Y SOT363 SC-88 PBLS4003V SOT666 - 1.2 Features n Low V (BISS) and resistor-equipped transistor in one package CEsat n Low threshold voltage (<1 V) compared to MOSFET n Low drive power required n Space-saving solution n Reduction of component count 1.3 Applications n Supply line switches n Battery charger switches n High-side switches for LEDs, drivers and backlights n Portable equipment 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 PNP low V transistor CEsat V collector-emitter voltage open base - - - 40 V CEO I collector current - - - 500 mA C 1 R collector-emitter saturation I = - 500 mA - 440 700 m CEsat C resistance I = - 50 mA B TR2 NPN resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEOPBLS4003Y PBLS4003V NXP Semiconductors 40 V PNP BISS loadswitch Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I output current - - 100 mA O R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 65 4 6 5 4 2 base TR1 3 output (collector) TR2 R1 R2 4 GND (emitter) TR2 TR2 5 input (base) TR2 TR1 1 2 3 6 collector TR1 001aab555 123 sym036 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBLS4003Y SC-88 plastic surface-mounted package 6 leads SOT363 PBLS4003V - plastic surface-mounted package 6 leads SOT666 4. Marking Table 5. Marking codes 1 Type number Marking code PBLS4003Y S3* PBLS4003V K3 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS4003Y PBLS4003V 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 13 February 2009 2 of 11

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