PBRP123YT 40 V, 600 mA PNP PB RET R1 = 2.2 k, R2 = 10 k 1 April 2021 Product data sheet 1. General description PNP low V Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 CEsat (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT 2. Features and benefits 600 mA output current capability Low collector-emitter saturation voltage V CEsat High current gain h FE Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design 10 % resistor ratio tolerance 3. Applications Digital application in automotive and industrial segments Switching loads Medium current peripheral driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I output current 1 - - -600 mA O R1 bias resistor 1 2 1.54 2.2 2.86 k R2/R1 bias resistor ratio 2 4.1 4.55 5 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint. 2 See sectionTest informatio for resistor calculation and test conditionsNexperia PBRP123YT 40 V, 600 mA PNP PB RET R1 = 2.2 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND ground (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBRP123YT SOT23 plastic, surface-mounted package 3 terminals 1.9 mm SOT23 pitch 2.9 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %7Q PBRP123YT 1 % = placeholder for manufacturing site code PBRP123YT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 1 April 2021 2 / 12