PBSS4120T Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4120T 20 V, 1 A NPN low V (BISS) transistor CEsat Product data sheet 2003 Sep 29NXP Semiconductors Product data sheet 20 V, 1 A PBSS4120T NPN low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage V CEsat SYMBOL PARAMETER MAX. UNIT High collector current capability I and I C CM V collector-emitter voltage 20 V CEO High efficiency leading to less heat generation I collector current (DC) 1 A C Reduced printed-circuit board requirements I peak collector current 3 A CM Cost effective alternative to MOSFETs in specific R equivalent on-resistance 200 m CEsat applications. PINNING APPLICATIONS PIN DESCRIPTION Power management 1 base DC/DC conversion 2 emitter Supply line switching 3 collector Battery charger LCD backlighting. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 Inductive load drivers (e.g. relays, buzzers and 3 motors). 1 DESCRIPTION 2 NPN BISS transistor in a SOT23 plastic package providing 1 2 ultra low V and R parameters. CEsat CEsat PNP complement: PBSS5120T. Top view MAM255 MARKING (1) TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT23) and symbol. PBSS4120T *3B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS4120T plastic surface mounted package 3 leads SOT23 2003 Sep 29 2