PBSS5560PA Nexperia

PBSS5560PA 60 V, 5 A PNP low V (BISS) transistor CEsat Rev. 01 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 5A C I peak collector current single pulse -- 6A CM t 1ms p 1 R collector-emitter I = 5A -55 90 m CEsat C saturation resistance I = 250 mA B 1 Pulse test: t 300 s 0.02. pPBSS5560PA NXP Semiconductors 60 V, 5 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5560PA HUSON3 plastic thermal enhanced ultra thin small outline package SOT1061 no leads three terminals body 2 2 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5560PA AC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 7V EBO I collector current - 5A C I peak collector current single pulse - 6A CM t 1ms p I base current - 600 mA B 1 P total power dissipation T 25 C -500 mW tot amb 2 -1 W 3 -1.4 W 4 -2.1 W PBSS5560PA 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 21 April 2010 2 of 15