PBSS5560PA Nexperia

PBSS5560PA electronic component of Nexperia
PBSS5560PA Nexperia
PBSS5560PA Bipolar Transistors - BJT
PBSS5560PA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS5560PA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5560PA Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS5560PA
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR,PNP,60V,5A,SOT1061
Datasheet: PBSS5560PA Datasheet (PDF)
Price (USD)
100: USD 0.3286 ea
Line Total: USD 32.86 
Availability : 0
  
QtyUnit Price
100$ 0.3286
500$ 0.258
1000$ 0.2408

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.3286
500$ 0.258
1000$ 0.2408

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Gain Bandwidth Ft Typ
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS5560PA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5560PA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5560PA 60 V, 5 A PNP low V (BISS) transistor CEsat Rev. 01 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 5A C I peak collector current single pulse -- 6A CM t 1ms p 1 R collector-emitter I = 5A -55 90 m CEsat C saturation resistance I = 250 mA B 1 Pulse test: t 300 s 0.02. pPBSS5560PA NXP Semiconductors 60 V, 5 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5560PA HUSON3 plastic thermal enhanced ultra thin small outline package SOT1061 no leads three terminals body 2 2 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5560PA AC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 7V EBO I collector current - 5A C I peak collector current single pulse - 6A CM t 1ms p I base current - 600 mA B 1 P total power dissipation T 25 C -500 mW tot amb 2 -1 W 3 -1.4 W 4 -2.1 W PBSS5560PA 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 21 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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