PESD16VV1BSF Extremely symmetrical bidirectional ESD protection diode 3 March 2021 Product data sheet 1. General description Extremely symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode. This device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line Extremely symmetrical layout Very low diode capacitance C = 6.5 pF maximum values d Low clamping to protect sensitive I/Os Low inductance protection path to ground ESD protection up to 12 kV according to IEC 61000-4-2 Ultra small SMD package 3. Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff - - 16 V RWM voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 5.7 6.5 pF d R amb I rated peak pulse t = 8/20 s 1 2 - - 1.3 A PPM p current 1 According to IEC 61000-4-5 and IEC 61643-321. 2 In positive and negative direction.Nexperia PESD16VV1BSF Extremely symmetrical bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD16VV1BSF DSN0603-2 silicon, leadless ultra small package 2 terminals 0.4 mm pitch SOD962-2 0.6 mm x 0.3 mm x 0.3 mm body 7. Marking Table 4. Marking codes Type number Marking code W PESD16VV1BSF 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse standoff voltage - 16 V RWM I rated peak pulse current t = 8/20 s 1 2 - 1.3 A PPM p T junction temperature - 150 C j T ambient temperature -40 125 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 3 - 12 kV ESD voltage 1 According to IEC 61000-4-5 and IEC 61643-321. 2 In positive and negative direction. 3 Device stressed with ten non-repetitive ESD pulses. PESD16VV1BSF All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 3 March 2021 2 / 10