X-On Electronics has gained recognition as a prominent supplier of PMH850UPEH MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMH850UPEH MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMH850UPEH Nexperia

PMH850UPEH electronic component of Nexperia
PMH850UPEH Nexperia
PMH850UPEH MOSFETs
PMH850UPEH  Semiconductors

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See Product Specifications
Part No. PMH850UPEH
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 30V 600mA (Ta) 660mW (Ta), 2.23W (Tc) Surface Mount DFN0606-3 (SOT8001)
Datasheet: PMH850UPEH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3602 ea
Line Total: USD 0.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 10000
Multiples : 10000
10000 : USD 0.0459
30000 : USD 0.0413
50000 : USD 0.0367
100000 : USD 0.0358

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3071
10 : USD 0.22
100 : USD 0.1248
500 : USD 0.0827
1000 : USD 0.0634
2000 : USD 0.0551
5000 : USD 0.0496

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3071
10 : USD 0.22
100 : USD 0.1248
500 : USD 0.0827
1000 : USD 0.0634
2000 : USD 0.0551
5000 : USD 0.0496

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 5
Multiples : 1
5 : USD 0.3207
10 : USD 0.2064
100 : USD 0.1073
500 : USD 0.0917
1000 : USD 0.0762
5000 : USD 0.0753

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3602
10 : USD 0.2337
100 : USD 0.1053
500 : USD 0.0784
1000 : USD 0.0614
2500 : USD 0.0614
10000 : USD 0.0488
20000 : USD 0.0409

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Drive Voltage Max Rds On Min Rds On
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMH850UPEH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMH850UPEH and other electronic components in the MOSFETs category and beyond.

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PMH850UPE 30 V, P-channel Trench MOSFET 8 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 0.62 0.37 mm 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -0.6 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.5 A T = 25 C - 0.85 1 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMH850UPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 1 2 S source 3 D drain G 3 Transparent top view S DFN0606-3 (SOT8001) 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMH850UPE DFN0606-3 plastic, leadless ultra small package 3 terminals body 0.62 x SOT8001 0.62 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMH850UPE 0001 1001 reading direction pin 1 indication marking code reading example: (example) 1011 1101 reading direction aaa-029459 Fig. 1. DFN0606-3 (SOT8001) binary marking code description PMH850UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 8 April 2020 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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