Product Information

PMN34UP,115

Name: PMN34UP,115
Brand: Nexperia
SKU: PMN34UP115_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PMN34UP,115 electronic component of Nexperia

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Datasheet

MOSFET 20V 5 A P-CH TRENCH MOSFET

Manufacturer: Nexperia

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9103 ea
Line Total: USD 0.91

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 1 Multiples : 1 PMN34UP,115 Nexperia	1 : USD 0.9342 10 : USD 0.7722 100 : USD 0.1955 1000 : USD 0.1566 3000 : USD 0.1361 9000 : USD 0.1317 24000 : USD 0.1296 45000 : USD 0.1264 99000 : USD 0.122

0 - WHS 2 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 3000 Multiples : 3000 PMN34UP,115 Nexperia	3000 : USD 0.1788

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V R rated Trench MOSFET technology DSon Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---5 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-2.4A T = 25 C - 34 40 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 6 5 4 2 D drain 3 G gate G 4S source 132 S 5 D drain SOT457 (TSOP6) 017aaa094 6 D drain SOT457

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFET MOSFET
RoHS - XON Y Y
Transistor Polarity P - Channel P - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case TSOP - 6 TSOP - 6
Packaging Reel Reel
Configuration Single Single
Brand Nexperia Nexperia
Continuous Drain Current - 5 A - 5 A
Drain-Source Breakdown Voltage - 20 V - 20 V
Power Dissipation 6250 mW 6250 mW
Rds On 34 Mohms 34 Mohms
Fall Time 33 ns 33 ns
Gate Charge Qg 15.5 nC 15.5 nC
Rise Time 21 ns 21 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 95 ns 95 ns