PMN40XPEAX Nexperia

PMN40XPEA 20 V, P-channel Trench MOSFET 7 July 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range T = 175 C j Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C) AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C 1 - - -4.7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -4.7 A T = 25 C - 43 50 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN40XPEA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 1 D drain D 2 D drain 3 G gate G 1 2 3 4 S source SC-74 TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN40XPEA SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN40XPEA 6F PMN40XPEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 7 July 2020 2 / 15