Product Information

PMN55ENEH

PMN55ENEH electronic component of Nexperia

Datasheet
MOSFET 60 V, N-channel Trench MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1
Multiples : 1

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PMN55ENEH
Nexperia

1 : USD 0.7524
10 : USD 0.6435
100 : USD 0.3692
500 : USD 0.2769
1000 : USD 0.2158
3000 : USD 0.175
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Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5s 1 - - 4.5 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3.4 A T = 25 C - 46 60 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN55ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN55ENE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN55ENE 3J PMN55ENE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 December 2017 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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