Product Information

PMV25ENEAR

PMV25ENEAR electronic component of Nexperia

Datasheet
MOSFET PMV25ENEA/TO-236AB/REEL 7" Q3/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4413 ea
Line Total: USD 0.44

18488 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1387 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMV25ENEAR
Nexperia

1 : USD 0.572
10 : USD 0.4196
25 : USD 0.4159
100 : USD 0.2509
250 : USD 0.2484
500 : USD 0.246
1000 : USD 0.143

10349 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

PMV25ENEAR
Nexperia

5 : USD 0.2881
50 : USD 0.2319
150 : USD 0.2077
500 : USD 0.1778
3000 : USD 0.1644
6000 : USD 0.1563

18488 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMV25ENEAR
Nexperia

1 : USD 0.4413
10 : USD 0.3346
100 : USD 0.1969
1000 : USD 0.1661
3000 : USD 0.1448
99000 : USD 0.1364

Read More Specifications

     
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Product Category
RoHS - XON
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Cnhts
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Additional Infomation About Product

PMV25ENEA 30 V, N-channel Trench MOSFET 28 October 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 5.5 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 5.5 A T = 25 C - 17 24 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMV25ENEA 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source 3 D drain G 1 2 SOT23 S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV25ENEA SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 PMV25ENEA DU% 1 % = placeholder for manufacturing site code PMV25ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 28 October 2020 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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