PMV25ENEAR Nexperia

PMV25ENEA 30 V, N-channel Trench MOSFET 28 October 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 5.5 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 5.5 A T = 25 C - 17 24 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMV25ENEA 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source 3 D drain G 1 2 SOT23 S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV25ENEA SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 PMV25ENEA DU% 1 % = placeholder for manufacturing site code PMV25ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 28 October 2020 2 / 15