PMV33UPE Nexperia

PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ESD protected 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C t 5 s ---5.3 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-3 A T = 25 C - 30 36 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . SOT23PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV33UPE TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV33UPE EJ% 1 % = placeholder for manufacturing site code PMV33UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 12 June 2012 2 of 15