X-On Electronics has gained recognition as a prominent supplier of PMZB950UPELYL MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZB950UPELYL MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMZB950UPELYL Nexperia

PMZB950UPELYL electronic component of Nexperia
PMZB950UPELYL Nexperia
PMZB950UPELYL MOSFETs
PMZB950UPELYL  Semiconductors

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See Product Specifications
Part No. PMZB950UPELYL
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 20 V, P-channel Trench MOSFET
Datasheet: PMZB950UPELYL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.426 ea
Line Total: USD 0.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.426
10 : USD 0.2621
100 : USD 0.1276
500 : USD 0.1102
1000 : USD 0.0863
5000 : USD 0.0784
10000 : USD 0.0636
20000 : USD 0.0636

   
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We are delighted to provide the PMZB950UPELYL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZB950UPELYL and other electronic components in the MOSFETs category and beyond.

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PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 0.6 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V = -4.5 V T = 25 C - - -500 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia PMZB950UPEL 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB950UPEL DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 solder SOT883B lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMZB950UPEL 0101 1111 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB950UPEL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 5 December 2016 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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