Product Information

PSMN3R8-100BS.118

PSMN3R8-100BS.118 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1375 ea
Line Total: USD 3.14

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 4.564
5 : USD 3.318
14 : USD 3.136

     
Manufacturer
Product Category
Kind Of Package
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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PSMN3R8-100BS.118 is a discrete power MOSFET part produced by Nexperia. It has a maximum drain source voltage (Vdss) of 100 V, a maximum drain current (Id) of 3 A, and a maximum power dissipation of 8 W. The mosfet has an Rds (on) of 0.118 O and a threshold voltage of -2.5 V. It is a lead free device with a RoHS compliant package. It has a Pb-free soldering profile. This is a low-power MOSFET switch with a low-on resistance and high-speed switching capability. It is suitable for use in DC/DC converters, USB ports, LED lighting, and other general purpose switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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