Product Information

PTVS11VP1UP.115

PTVS11VP1UP.115 electronic component of Nexperia

Datasheet
Diode: transil; 600W; 12.85V; 33A; unidirectional; SOD128
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.3731 ea
Line Total: USD 1.12

1165 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1165 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3
Multiples : 1
3 : USD 0.3731
25 : USD 0.2626
87 : USD 0.1885
238 : USD 0.1781

Read More Specifications

     
Manufacturer
Product Category
Breakdown Voltage
Case
Semiconductor Structure
Mounting
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
Operating Temperature
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Additional Infomation About Product

PTVS11VP1UP.115 is an N-Channel FRFET (Field-Effect Transistor) manufactured by Nexperia. It is an advanced VRM (Voltage Regulator Module) MOSFET, designed to be used as a synchronous rectifier in a variety of low-voltage VRMs. The device is optimized for use as a primary MOSFET in synchronous rectifier applications providing a low RDS(on) and gate charge, improving efficiency and fast switching. This device has a drain-source breakdown voltage (VDS) of 60 V and RDS(on) max of 2.2 m?, making it suitable for high current switching. The device also has an integrated ESD protection circuit.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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