Product Information

PTVS9V0P1UP.115

PTVS9V0P1UP.115 electronic component of Nexperia

Datasheet
Diode: transil; 600W; 10.55V; 39A; unidirectional; SOD128

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1514 ea
Line Total: USD 0.76

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 5
5 : USD 0.1514
25 : USD 0.1262
100 : USD 0.118
115 : USD 0.118
500 : USD 0.118

     
Manufacturer
Product Category
Breakdown Voltage
Case
Semiconductor Structure
Mounting
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
Operating Temperature
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PTVS9V0P1UP.115 is a device produced by Nexperia, a leader in power solutions, signal management solutions, and secure solutions. It is a dual N-channel logic level power MOSFET. This device is designed to operate with a tiny footprint of 1.2mm x 1.6mm and a maximum drain current of 30mA. It has an ultra-low gate threshold voltage of 0.65V and a high maximum drain to source breakdown voltage of 60V. This device also offers on-state resistance of 8.8 ohms and fast switching times. It is suitable for batter-powered applications with high efficiency and low noise.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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