PXP8R3-20QXJ Nexperia

PXP8R3-20QX 20 V, P-channel Trench MOSFET 6 September 2021 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology MLPAK33 package (3.3 x 3.3 mm footprint) 3. Applications High-side load switch Battery management DC-to-DC conversion Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -20.2 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -12.3 A T = 25 C - 6.6 8.3 m DSon GS D j resistance V = -2.5 V I = -9.7 A T = 25 C - 9.6 13.3 m GS D j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PXP8R3-20QX 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 1 2 3 4 2 S source D 3 S source 4 G gate G 5 D drain S 6 D drain 017aaa257 8 7 6 5 7 D drain MLPAK33 (SOT8002-1) 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PXP8R3-20QX MLPAK33 plastic thermal enhanced surface mounted package mini SOT8002-1 leads 8 terminals pitch 0.65 mm 3.3 x 3.3 x 0.8 mm body 7. Marking Table 4. Marking codes Type number Marking code 9AW PXP8R3-20QX PXP8R3-20QX All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 6 September 2021 2 / 14