Product Information

NJL5501R-TE1

NJL5501R-TE1 electronic component of Nisshinbo

Datasheet
Optical Switches, Reflective, Phototransistor Output SMT Photo Reflector

Manufacturer: Nisshinbo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.7178 ea
Line Total: USD 4.72

866 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
831 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

NJL5501R-TE1
Nisshinbo

1 : USD 3.3925
10 : USD 2.7715
100 : USD 1.9205
500 : USD 1.725
1000 : USD 1.5525
2000 : USD 1.4145
4000 : USD 1.38
10000 : USD 1.3685

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Voltage
Reverse Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Sensing Method
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Tradename
Output Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NJL5501R COBP PHOTO REFLECTOR with RED & IR LED GENERAL DISCRIPTION The NJL5501R is the compact surface mount type photo reflector, which is built in a RED LED, Infrared LED and a high sensitive detector. This product is suit for the application for Bio monitor as pulse rate, SpO . 2 FEATURES Peak wavelength : 6603nm (RED) , 94010nm (Infrared) P High output current : 1000 to 4300A typ (RED), 145 to 580A typ (Infrared Miniature, thin package: 1.9x2.6x0.8mm APPLICATION Bio monitor as pulse rate, SpO 2 ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATINGS UNIT Emitter Forward Current (Continuous) IF RED 30 mA IF IR 30 mA Reverse Voltage (Continuous) VR RED 5 V VR IR 5 V 1 Power Dissipation * PD 65 mW Detector Collector-Emitter Voltage VCEO 16 V Emitter-Collector Voltage VECO 6 V Collector Current IC 10 mA Collector Power Dissipation PC 25 mW Coupled Total Power Dissipation Ptot 85 mW Operating Temperature Topr -20 to +85 C Storage Temperature Tstg -30 to +85 C Reflow Soldering Temperature Tsol 260 peak C *1 Prohibits thatRED LE andIR LE turn on at the same time. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Emitter Forward Voltage VF RED IF=4mA 1.7 2.1 V VF IR IF=4mA 1.0 V 1.35 Reverse Current IR RED VR=5V A 5 IR IR VR=5V A 5 1 I =20mA Peak Wavelength * 657 nm P RED 660 663 I =20mA 930 nm P IR 940 950 Detector Dark Current ICEO VCE=10V 0.2 A Collector-Emitter Voltage VCEO IC=100A V 16 Coupled 2 Output Current * IO RED IF=4mA,VCE=2V,d=0.7mm 1000 4300 A IO IR IF=4mA,VCE=2V,d=0.7mm 145 580 A 3 Operating Dark Current * ICEOD RED IF=4mA,VCE=2V 5 A ICEOD IR IF=4mA,VCE=2V 1 A Response Time(Rise/Fall) Tr,Tf IO=100A, VCE=2V,d=0.7mm,RL=1k s 20 *1 This is represented as Emission wavelength range of LED. The emission wavelength verification test has not confirmed in the manufacturing process. *2 Please refer to Output Current Test Condition. *3 ICEOD may increase according to the periphery situation of the surface mounted condition. 21.Nov.2013 - 1 - NJL5501R OUTLINE unit:mm 1. Cathode for RED LED 2. Collector 3. Anode for Infrared LED 4. Cathode for Infrared LED 5. Emitter 6. Anode for RED LED Unspecified tolerance : 0.1mm Example of solder pads dimensions Dimensions in parenthesis are shown for reference. BLOCK DIAGRAM 1. Cathode for RED LED (RED LED) (IR LED) 6. Anode for RED LED 2. Collector 5. Emitter 3. Anode for Infrared LED 4. Cathode for Infrared LED 1 6 2 5 3 4 OUTPUT CURRENT TEST CONDITION DARK CURRENT TEST CONDITION The signal from LED is reflected at the aluminum surface. Light Sealed Dark Box Aluminum Evapolation Surface IF ICEOD IF VCE IF Io IF VCE - 2 - 21.Nov.2013 (0.8mm) 1.5mm

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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