NJL5501R-TE1 Nisshinbo

NJL5501R-TE1 electronic component of Nisshinbo
NJL5501R-TE1 Nisshinbo
NJL5501R-TE1 Optical Switches, Reflective, Phototransistor Output
NJL5501R-TE1  Sensors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NJL5501R-TE1 Optical Switches, Reflective, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. NJL5501R-TE1 Optical Switches, Reflective, Phototransistor Output are a product manufactured by Nisshinbo. We provide cost-effective solutions for Optical Switches, Reflective, Phototransistor Output, ensuring timely deliveries around the world.

Part No. NJL5501R-TE1
Manufacturer: Nisshinbo
Category: Optical Switches, Reflective, Phototransistor Output
Description: Optical Switches, Reflective, Phototransistor Output SMT Photo Reflector
Datasheet: NJL5501R-TE1 Datasheet (PDF)
Price (USD)
1: USD 3.4625 ea
Line Total: USD 3.46 
Availability : 659
  
Ship by Mon. 27 Oct to Wed. 29 Oct
QtyUnit Price
1$ 3.4625
10$ 2.231
100$ 1.705
500$ 1.54
1000$ 1.353
2000$ 1.353
4000$ 1.287

Availability 659
Ship by Mon. 27 Oct to Wed. 29 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.4625
10$ 2.231
100$ 1.705
500$ 1.54
1000$ 1.353
2000$ 1.353
4000$ 1.287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Voltage
Reverse Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Sensing Method
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Tradename
Output Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NJL5501R-TE1 from our Optical Switches, Reflective, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJL5501R-TE1 and other electronic components in the Optical Switches, Reflective, Phototransistor Output category and beyond.

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NJL5501R COBP PHOTO REFLECTOR with RED & IR LED GENERAL DISCRIPTION The NJL5501R is the compact surface mount type photo reflector, which is built in a RED LED, Infrared LED and a high sensitive detector. This product is suit for the application for Bio monitor as pulse rate, SpO . 2 FEATURES Peak wavelength : 6603nm (RED) , 94010nm (Infrared) P High output current : 1000 to 4300A typ (RED), 145 to 580A typ (Infrared Miniature, thin package: 1.9x2.6x0.8mm APPLICATION Bio monitor as pulse rate, SpO 2 ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATINGS UNIT Emitter Forward Current (Continuous) IF RED 30 mA IF IR 30 mA Reverse Voltage (Continuous) VR RED 5 V VR IR 5 V 1 Power Dissipation * PD 65 mW Detector Collector-Emitter Voltage VCEO 16 V Emitter-Collector Voltage VECO 6 V Collector Current IC 10 mA Collector Power Dissipation PC 25 mW Coupled Total Power Dissipation Ptot 85 mW Operating Temperature Topr -20 to +85 C Storage Temperature Tstg -30 to +85 C Reflow Soldering Temperature Tsol 260 peak C *1 Prohibits thatRED LE andIR LE turn on at the same time. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Emitter Forward Voltage VF RED IF=4mA 1.7 2.1 V VF IR IF=4mA 1.0 V 1.35 Reverse Current IR RED VR=5V A 5 IR IR VR=5V A 5 1 I =20mA Peak Wavelength * 657 nm P RED 660 663 I =20mA 930 nm P IR 940 950 Detector Dark Current ICEO VCE=10V 0.2 A Collector-Emitter Voltage VCEO IC=100A V 16 Coupled 2 Output Current * IO RED IF=4mA,VCE=2V,d=0.7mm 1000 4300 A IO IR IF=4mA,VCE=2V,d=0.7mm 145 580 A 3 Operating Dark Current * ICEOD RED IF=4mA,VCE=2V 5 A ICEOD IR IF=4mA,VCE=2V 1 A Response Time(Rise/Fall) Tr,Tf IO=100A, VCE=2V,d=0.7mm,RL=1k s 20 *1 This is represented as Emission wavelength range of LED. The emission wavelength verification test has not confirmed in the manufacturing process. *2 Please refer to Output Current Test Condition. *3 ICEOD may increase according to the periphery situation of the surface mounted condition. 21.Nov.2013 - 1 - NJL5501R OUTLINE unit:mm 1. Cathode for RED LED 2. Collector 3. Anode for Infrared LED 4. Cathode for Infrared LED 5. Emitter 6. Anode for RED LED Unspecified tolerance : 0.1mm Example of solder pads dimensions Dimensions in parenthesis are shown for reference. BLOCK DIAGRAM 1. Cathode for RED LED (RED LED) (IR LED) 6. Anode for RED LED 2. Collector 5. Emitter 3. Anode for Infrared LED 4. Cathode for Infrared LED 1 6 2 5 3 4 OUTPUT CURRENT TEST CONDITION DARK CURRENT TEST CONDITION The signal from LED is reflected at the aluminum surface. Light Sealed Dark Box Aluminum Evapolation Surface IF ICEOD IF VCE IF Io IF VCE - 2 - 21.Nov.2013 (0.8mm) 1.5mm

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Nisshinbo
Nisshinbo Micro Devices Inc
NJR
NJR Corporation/NJRC
Ricoh
Ricoh Elec Devices
Ricoh Electronic Devices Company
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