MJ10012 NTE

MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high voltage, high current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications. Features: Collector Emitter Sustaining Voltage: V = 400Vdc (Min) CEO(sus) 175 Watts Capability at 50 Volts Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 400V CEO CollectorEmitter Voltage (R = 27 ), V ......................................... 550V BE CER Collector Base Voltage, V ...................................................... 600V CBO EmitterBase Voltage, V .......................................................... 8V EBO Collector Current, I C Continuous .................................................................. 10A Peak (Note 1) ................................................................ 15A Base Current, I .................................................................... 2A B Total Power Dissipation, P D T = +25 C ................................................................ 175W C T = +100 C ............................................................... 100W C Derate Above 25 C .................................................... 1.0W/ C Operating Junction Temperature Range, T .................................. 65 to +200 C J Storage Temperature Range, T .......................................... 65 to +200 C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5 sec), T ....................... +275 C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, V = 400V 400 V CEO(sus) C B clamp V I = 200mA, R = 27 , V = 400V 425 V CER(sus) C BE clamp Collector Cutoff Current I V = 550V, R = 27 1.0 mA CER CER BE I V = 600V, I = 0 1.0 mA CBO CBO E Emitter Cutoff Current I V = 6V, I = 0 40 mA EBO EB C ON Characteristics (Note 3) DC Current Gain h V = 6V, I = 3A 300 550 FE CE C V = 6V, I = 6A 100 350 2000 CE C V = 6V, I = 10A 20 150 CE C CollectorEmitter Saturation Voltage V I = 3A, I = 600mA 1.5 V CE(sat) C B I = 6A, I = 600mA 2.0 V C B I = 10A, I = 2A 2.5 V C B BaseEmitter Saturation Voltage V I = 6A, I = 600mA 2.5 V BE(sat) C B I = 10A, I = 2A 3.0 V C B BaseEmitter ON Voltage V I = 10A, V = 6V 2.8 V BE(on) C CE Diode Forward Voltage V I = 10A 2.0 3.5 V F F Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 100kHz 165 350 pF ob CB E test Switching Characteristics Storage Time t V = 12V, I = 6A, I = I = 300mA 7.5 15 s s CC C B1 B2 Fall Time t 5.2 15 s f Functional Tests Pulsed Energy Test I 2 /2 180 mJ C L Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. C B 1k 30 E