NTE30051 & NTE30052 Infrared Phototransistor Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Sensitive Area, AA . 0.19mm Power Dissipation, P . 150mW D Collector Emitter Voltage, V 30V CEO EmitterCollector Voltage, V . 5V ECO Operating Temperature Range, T . 25 to +85C opr Storage Temperature Range, T 40 to +100C stg Lead Temperature (During Soldering, .062 (1.6mm) from case bottom, 5sec max), T L NTE30051 . +240 C NTE30052 . +260 C Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Angle of Half Sensitive 2 NTE30051 2 1/2 I = 1mA, E = 0mW/cm 20 Degree C e NTE30052 38 Degree 2 Collector Emitter Voltage V I = 1mA, E = 0mW/cm 30 V CEO C e 2 EmitterCollector Voltage V I = 100uA, E = 0mW/cm 5 V ECO C e CollectorEmitter Saturation Voltage V I = 0.5mA, I = 100uA 0.4 V CES C b Collector Current (Saturation) 2 NTE30051 I V = 5V, E = 0.5mW/cm 0.2 1.5 mA C CE e NTE30052 0.8 3.0 12 mA 2 Collector Dark Current I V = 20V, E = 0mW/cm 100 nA CEO CE e Rise Time t V = 5V, I = 1mA, R = 1000 15 s CE C L r Fall Time t V = 5V, I = 1mA, R = 1000 15 s f CE C L Peak Wavelength p 900 nm Sensitivity Wavelength 500 1100 nm0.20 (5.20) NTE30051 NTE30052 Cathode Cathode .152 .224 (3.85) (5.7) Dia Dia .118 (3.0) Dia .197 (5.0) Dia .20 8 .342 (5.3) (8.7) 1.000 1.000 (25.4) (25.4) Min Min .100 (2.54) .100 (2.54)