NTE30133 NTE

NTE30133 electronic component of NTE
NTE30133 NTE
NTE30133 Phototransistors
NTE30133  Optoelectronics
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE30133 Phototransistors across the USA, India, Europe, Australia, and various other global locations. NTE30133 Phototransistors are a product manufactured by NTE. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

Part No. NTE30133
Manufacturer: NTE
Category: Phototransistors
Description: INFRARED PHOTOTRANSISTOR 9
Datasheet: NTE30133 Datasheet (PDF)
Price (USD)
110: USD 0.7395 ea
Line Total: USD 81.34 
Availability : 0
  
QtyUnit Price
110$ 0.7395
200$ 0.4831
500$ 0.3402
1000$ 0.3232

Availability 0
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 110
Multiples : 1
QtyUnit Price
110$ 0.7395
200$ 0.4831
500$ 0.3402
1000$ 0.3232


Availability 0
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1398
5$ 0.7694
25$ 0.6412
29$ 0.5699
79$ 0.5414

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE30133 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE30133 and other electronic components in the Phototransistors category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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NTE30133 Infrared Phototransistor 1.9mm Type SMD Package Description: The NTE30133 is a phototransistor in a miniature SMD package which is molded in a water clear plastic with a spherical top view lens. This device is spectrally matched for use with infrared emitting diodes such as the NTE30132. Features: Fast Response Time High Photo Sensitivity Low Junction Capacitance Compatible with Infrared and Vapor Phase Reflow Solder Process Silicon Chip Material Water Clear Lens For Use with NTE30132 Applications: Miniature Switch Counters and Sorter Position Sensor Infrared Applied System Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterCollector Voltage, V ....................................................... 5V ECO Collector Current, I .............................................................. 20mA C Power Dissipation (at or below T = +25C), P ...................................... 75mW A D Operating Temperature Range, T .......................................... 25 to +85C opr Storage Temperature Range, T ........................................... 40 to +85C stg Soldering Temperature (5sec Max), T ............................................ +260 C solElectro Optical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Range of Spectrol Bandwidth 400 1100 nm 0.5 Wavelength of Peak Sensitivity 940 nm p 2 CollectorEmitter Breakdown Voltage V I = 100A, E = 0mW/cm 30 V (BR)CEO C e 2 EmitterCollector Breakdown Voltage V I = 100A, E = 0mW/cm 5 V (BR)ECO E e 2 CollectorEmitter Saturation Voltage V I = 2mA, E = 1mW/cm 0.4 V CE(sat) C e 2 Collector Dark Current I V = 20V, E = 0mW/cm 100 nA CEO CE e 2 OnState Collector Current I V = 5V, E = 1mW/cm 1.0 1.5 mA C(ON) CE e Rise Time t V = 5V, I = 1mA, 15 s r CE C R = 1000 L Fall Time t 15 s f .098 (2.5) .043 (1.1) .075 (1.9) Dia .016 (0.4) .020 (0.5) Collector Emitter .276 (7.0) Min .276 (7.0) Min .055 (1.4) .110 (2.8) .079 (2.0)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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