NTE3033 Infrared Photodiode Description: The NTE3033 is a high output, high speed silicon photodiode mounted in a sideviewing plastic package with visible light cutoff filter. Features: Visible Ray Cutoff Mold Type Clear Lens Type High Speed Response High Output Power Applications: Optical Transmission Optic Receiver Modules Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Reverse Voltage, V ............................................................... 35V R Power Dissipation, P 150mW.......................................................... D Operating Temperature Range, T ......................................... 30 to +70C opr Storage Temperature Range, T ........................................... 40 to +80C stg Lead Temperature (During Soldering, 2mm from the package, 3sec Max.), T ........... +260 C L Electro Optical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit 2 Open Circuit Voltage V E = 0.5mW/cm 0.35 V CC e 2 Short Circuit Current I E = 0.5mW/cm 20 32 A SC e 2 Dark Current I V = 10V, E = 0.5mW/cm 30 nA D R e Terminal Capacitance C V = 3V, f = 1MHz 175 pF t R Response Time t /t V = 10V, R = 1000 50/50 ns r f R L Spectral Sensitivity 450 1050 nm Peak Emission Wavelength 900 nm P Half Angle 8 deg Rev. 420.276 (7.0) .111 (2.8) Device Center .315 (8.0) .197 (5.0) * .090 (2.3) .512 (13.0) Anode Cathode Min .024 (0.6) .016 (0.4) .200 (5.08) * Denotes Cathode mark