Product Information

NTE3049

NTE3049 electronic component of NTE

Datasheet
Optocoupler Triac AC-OUT 1-CH 250VDRM 6-Pin PDIP

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.7805 ea
Line Total: USD 7.78

9 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 6
Multiples : 1
6 : USD 6.237
10 : USD 5.67
50 : USD 4.9481
250 : USD 4.3313
500 : USD 4.0819
1000 : USD 3.9506
2500 : USD 3.8456
5000 : USD 3.7931

9 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 7.7805
5 : USD 3.9448
13 : USD 3.7264

     
Manufacturer
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NTE3049 Optoisolator Zero Crossing TRIAC Driver Description: The NTE3049 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a Zero Voltage crossing bilateral triac driver. It is designed for use with a triac in the interface of logic systems to equipment powered from 115 Vac lines, such as teletypewriters, CRTs, printers, motors, solenoids, and consumer appliances. Features: Simplifies Logic Control of 110VAC Power Zero Voltage Crossing High Breakdown Voltage: V = 250V Min DRM High Isolation Voltage: V = 7500V Min ISO dv/dt of 100V/ s Typ Absolute Maximum Ratings: (T = +25C, unless otherwise indicated) A Infrared LED Reverse Voltage, V . 3V R Continuous Forward Current, I 50mA F Total Power Dissipation (T = +25C), P . 120mW A D Derate Above 25C 1.33mW/C Output Driver OffState Output Terminal Voltage, V . 250V DRM Peak Repetitive Surge Current (PW = 100 s, 120pps), I 1A TSM Total Power Dissipation (T = +25C), P . 150mW A D Derate Above 25C 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V . 7500V ISO Total Power Dissipation (T = +25C), P . 250mW A D Derate Above 25C 2.94mW/C Junction Temperature Range, T . 40 to +100C J Ambient Operating Temperature Range, T 40 to +85C A Storage Temperature Range, T 40 to +150C stg Lead Temperature (During Soldering, 10s), T +260C L Note 1 Isolation surge voltage, V , is an internal device dielectric breakdown rating. ISOElectrical Characteristics: (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Reverse Leakage Current I V = 3V 0.05 A R R Forward Voltage V I = 30mA 1.3 1.5 V F F Output Detector (I = 0 unless otherwise specified) F Leakage, Either Direction I LED OFF, Rated V , Note 2 10 100 nA DRM1 DRM Peak OnState Voltage, Either Direction V I = 100mA Peak 1.8 3.0 V TM TM Critical Rate of Rise of OffState Voltage dv/dt 1000 2000 V/ s Coupled LED Trigger Current I Main Terminal Voltage = 3V, Note 3 15 mA FT Holding Current, Either Direction I 100 A H Isolation Voltage V f = 60Hz, t = 1sec 7500 VAC ISO pk Zero Crossing Inhibit Voltage V I = 15mA, MT MT Voltage above 5 20 V IH F 1 2 which device will not trigger Leakage in Inhibit State I I = 15mA, Rated V , OffState 500 A DRM2 F DRM Note 2. Test voltage must be applied within dv/dt rating. Note 3. All devices are guaranteed to trigger at an I value less than or equal to Max I . Therefore, F FT recommended operating I lies between max I (15mA) and absolute Max I (50mA). F FT F Anode 1 6 Main Terminal Substrate 2 5 Cathode Do Not Connect 6 54 .260 ZERO (6.6) CROSSING N.C. 3 4 Main Terminal CIRCUIT Max 12 3 .070 (1.78) Max .350 (8.89) .300 (7.62) Max .200 (5.08) .350 Max (8.89) Max .085 (2.16) Max .100 (2.54)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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