NTE3100 NTE

NTE3100 electronic component of NTE
NTE3100 NTE
NTE3100 Unclassified
NTE3100
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE3100 across the USA, India, Europe, Australia, and various other global locations. NTE3100 are a product manufactured by NTE. We provide cost-effective solutions for NTE3100, ensuring timely deliveries around the world.

Part No.NTE3100
Manufacturer:NTE
Category:Unclassified
Description:INTERRUPTER MODULE, PHOTOTRANSISTOR
Datasheet:NTE3100 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 8.4 ea
Line Total: USD 42 
Availability : 0
  
QtyUnit Price
5$ 8.4
50$ 6.6208
100$ 6.5187
250$ 6.2271
500$ 5.8771
1000$ 5.7896
2500$ 5.6146
5000$ 5.3958
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 8.4
50$ 6.6208
100$ 6.5187
250$ 6.2271
500$ 5.8771
1000$ 5.7896
2500$ 5.6146
5000$ 5.3958

   
Manufacturer
Product Category
Sensor Output
Forward Current If
Forward Voltage
Reverse Voltage Vr
Aperture Width
Gap Width
Sensor Mounting
Input Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE3100 from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE3100 and other electronic components in the NTE manufacturer and beyond.

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NTE3100 Photon Coupled Interrupter Module Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode and a NPN silicon photo transistor mounted is a polycarbonate housing. The package is designed to optimize the mech- anical resolution, coupling efficiency, ambient light rejection, cost and reliability. Operating on the prin- ciple that opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an ON state to an OFF state. Features: High Gain 3mm Gap Between LED and Detector Polycarbonate Case Protected Against Ambient Light Applications: Copiers, Printers, FAX Machines, Record Players, Cassette Decks, Optoelectronic Switches Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Total Device Operating Temperature Range, T ........................................... 25 to +85C J Storage Temperature Range, T ........................................... 40 to +85C stg Lead Temperature (During Soldering, 1/16 (1.6mm) from case, 10sec max), T ......... +260C L Input Diode Power Dissipation, P ............................................................ 75mW E Forward Current, I ............................................................... 50mA F Reverse Voltage, V ................................................................. 5V R Output Transistor Power Dissipation, P ............................................................ 75mW D Collector Current, I .............................................................. 20mA C CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterCollector Voltage, V ....................................................... 5V ECO Rev. 611Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Forward Voltage V I = 50mA 1.2 1.7 V F F Reverse Voltage V I = 100A 5 V R R Reverse Current I V = 5V 100 A R R Output CollectorEmitter Breakdown Voltage V I = 1mA 30 V (BR)CEO C EmitterCollector Breakdown Voltage V I = 100A 6 V (BR)ECO E Collector Emitter Dark Current I V = 10V 100 nA CEO CE Coupled Collector ON Current I I = 5mA, V = 5V 0.15 mA CE(on) F CE I = 20mA, V = 5V 1.0 mA F CE I = 30mA, V = 5V 1.9 mA F CE CollectorEmitter Saturation Voltage V I = 30mA, I = 1.8mA 0.4 V CE(sat) F C TurnOn Time t V = 5V, I = 30mA, R = 2.5k 8 s on CC F L Turn Off Time t 50 s off .984 (25.0) Max .750 (19.05) D Detector * May be S + D * E + E Emitter .118 (3.0) .260 (6.6) .110 (2.8) Typ Sensing Area .106 (2.7) .437 (11.1) Max Max .394 (10.0) Seating Min Plane .327 (8.3) Max .100 (2.54)

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