NTE54000 thru NTE54004 Silicon Controlled Rectifier (SCR) 55 Amp, TO220 Description: The NTE54000 thru NTE54004 are half wave, unidirectional, gate controlled silicon controlled rectifiers (SCR) packaged in a TO220 type case featuring glasspassivated junctions to ensure long term reliability and perimeter stability. Features: High Voltage Capability High Surge Capability GlassPassivated Chip Absolute Maximum Ratings: (T = +25C, 60Hz with a resistive load unless otherwise specified) A Repetitive Peak OffState Voltage, V DRM NTE54000 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE54001 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE54002 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE54003 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V NTE54004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Repetitive Peak Reverse Voltage, V RRM NTE54000 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE54001 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE54002 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE54003 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V NTE54004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V RMS On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A T(RMS) OnState Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A T(AV) Peak Surge (NonRepetitive) On State Current (More than One Full Cycle), I TSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650A Peak Gate Current (10s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GM Peak Gate Power Dissipation (10s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW G(AV) Peak On State Voltage (at Max. Rated RMS Current, T = +25C), V . . . . . . . . . . . . . . . . . 1.8V C TM 2 2 RMS Surge (NonRepetitive) On State Current for Fusing (8.3ms), I t . . . . . . . . . . . . . . 1750A sec Lead Temperature (During soldering, 1/16 from case, 10sec max), T . . . . . . . . . . . . . . . . . +230C L Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C oper Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5C/W thJCElectrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I , V & V = Max Rating, DRM DRM RRM NTE54000, NTE54001, NTE54002 I T = +100C 1.0 mA RRM C NTE54003 1.5 mA NTE54004 5.0 mA DC Holding Current I Initial OnState Current = 400mA, 60 mA H Gate Open DC Gate Trigger Current I V = 12V, R = 30 5 40 mA GT D L DC Gate Trigger Voltage V V = 12V, R = 30, T = +25C, 1.5 V GT D L C Note 1 Gate Controlled TurnOn Time t I = 150mA, Min. Width = 15s, 2.5 s gt GT Rise Time 0.1s Circuit Commutated Turn Off Time t I = 2A, I = 200mA at TurnOn, 35 s q T GT Pulse Duration = 50s, dv/dt = 20V/s, di/dt = 30A/s Critical Rate of Rise of OffState Voltage dv/dt T = +100C 500 V/s C Max Rate of Rise of OnState Current di/dt I = 150mA, Rise Time 0.1s 175 A/s GT Note 1. Minimum non trigger V at +125C is 0.2V. GT .420 (10.67) Max .110 (2.79) Tab .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate Anode/Tab .100 (2.54)