NTE5411 thru NTE5416 Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate, TO126 Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and re- mote control, and warning systems where reliability of operation is important. Features: Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Absolute Maximum Ratings: (T = +110C unles otherwise specified) C Repetitive Peak Forward and Reverse Blocking Voltage, V , V DRM RRM (1/2 Sine Wave, R = 1000, T = 40 to +110C, Note 1) GK C NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non Repetitive Peak Reverse Blocking Voltage , V RSM (1/2 Sine Wave, R = 1000, T = 40 to +110C) GK C NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650V Average On State Current, I T(AV) T = 40 to +110C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A C Surge On State Current (T = +90C), I C TSM 1/2 Sine wave, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A 1/2 Sine wave, 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A 2 2 Circuit Fusing (t = 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A s Peak Gate Power (Pulse Width = 10s, T = +90C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W C GM Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap- plied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.Absolute Maximum Ratings (Contd): (T = +110C unles otherwise specified) C Average Gate Power (t = 8.2ms, T = +90C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W C G(AV) Peak Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A GM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V RGM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3C/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W thJA Mounting Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 in. lb. Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower casetosink thermal resistance. Anode lead and heat- sink contact pad are common. Electrical Characteristics: (T = +25C, R = 1000 unles otherwise specified) C GK Parameter Symbol Test Conditions Min Typ Max Unit Rated V or V , T = +25C 10 A Peak Forward or Reverse I , DRM DRM RRM C Blocking Current I RRM Rated V or V , T = +110C 200 A DRM RRM C Peak Forward ON Voltage V I = 8.2A Peak, Note 3 2.2 V TM TM I V = 12V, R = 24 200 A Gate Trigger Current GT AK L (Continuous DC, Note 4) V = 12V, R = 24, T = 40C 500 A AK L C Gate Trigger Voltage V Source Voltage = 12V, R = 50, 1 V GT S (Continuous DC) V = 12V, R = 24, T = 40C AK L C Gate NonTrigger Voltage V V = Rated V , R = 100, 0.2 V GD AK DRM L T = +110C C Holding Current I V = 12V, I = 2mA, T = +25C 5 mA H AK GT C Initiating OnState Current = 200mA, 10 mA T = 40C C Total TurnOn Time t Source Voltage = 12V, R = 6k, 2 s gt S I = 8.2A, I = 2mA, Rated V , TM GT DRM Rise Time = 20ns, Pulse Width = 10s Forward Voltage Application Rate dv/dt V = Rated V , T = +110C 10 V/s D DRM C Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%. Note 4. Measurement does not include R current. GK