NTE56045 thru NTE56047 TRIAC, 16A, Sensitive Gate Description: The NTE56045 through NTE56047 are glass passivated, sensitive gate TRIACs in an isolated full pack type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage, V DRM NTE56045 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56046 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Full Sine Wave, T 38C), I (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A HS T NonRepetitive Peak OnState Current, I TSM (Full Sine Wave, T = +125C prior to Surge, with Reapplied V max) J DRM t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2 2 2 I t for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 20A, I = 0.2A, dI /dt = 0.2A/ s) TM G G MT (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (+), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/ s 2 Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power (Over Any 20ms Period), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoHeatsink (Full or Half Cycle), R thJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onstate. The rateofrise of current should not exceed 15A/ s.Electrical Characteristics: (T = +25C unless otherwise specfied) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A 2.5 10 mA 2 GT D T MT (+), G () 4.0 10 mA 2 MT (), G () 5.0 10 mA 2 MT (), G (+) 11 25 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 3.2 30 mA 2 L D T MT (+), G () 16 40 mA 2 MT (), G () 4.0 30 mA 2 MT (), G (+) 5.5 40 mA 2 Holding Current I V = 12V, I = 0.1A 4.0 30 mA H D T OnState Voltage V I = 20A 1.2 1.6 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = V max, T = +125C 0.1 0.5 mA D D DRM J Dynamic Characteristics Critical RateofRise of dV /dt V = 67% V max, T = +125C, 50 V/ s D DM DRM J OffState Voltage Exponential Waveform, Gate Open Gate Controlled TurnOn Time t I = 20A, V = V max, I = 0.1A, 2 s gt TM D DRM G dI /dt = 5A/ s G Isolation Characteristics (T = +25C unless otherwise specified) hs RMS Isolation Voltage from All V f = 50 60Hz, Sinusoidal Waveform, 2500 V ISOL 3 Pins to External Heatsink R.H. 65%, Clean and Dustfree Capacitance from T2 to C f = 1MHz 10 pF ISOL External Heatsink .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) .114 (2.9) Max Isol .252 (6.4) .622 (15.0) Max MT 2 .118 (3.0) Max .531 (13.5) Min MT G 1 .098 (2.5) .100 (2.54)