NTE5688, NTE5689, NTE5690 1 TRIAC - 40Amp, / Press Fit 2 Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, T = +110 C, Note 1), V J DRM NTE5688 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5689 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5690 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (T = +80C, Conduction Angle = 360 ), I . . . . . . . . . . . . . . . . . . . 40A C T(RMS) Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), I . . . . . . . . 400A TSM Peak Gate-Trigger Current (for 3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A GTM Peak Gate-Power Dissipation (I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W GT GTM GM Average Gate-Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110 C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C stg Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 C/W Typ thJC Electrical Characteristics: (At Specified Case Temperature) Peak Off-State Current, I DRM (Gate Open, T = +110 C, V = Max Rating, Note 1) . . . . . . . . . . . . . . . . . . . . . . 1mA Max C DRM Maximum On-State Voltage (T = +25C, I = 40A, Note 1), V . . . . . . . . . . . . . . . . . . . . 2.0V Max C T TM DC Holding Current (Gate Open, T = +25C, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . 60mA Max C Hold Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt (V = V , Gate Open, T = +110 C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/ s D DRM C Critical rate-of-Rise of commutation Voltage, Commutating dv/dt (V = V , I = 40A, Gate Unenergized, T = +80C, Note 1) . . . . . . . . . . . . . . . . . . . 3V/ s D DRM T C DC Gate-Trigger Current (V = 12VDC, R = 30, T = +25C), I D L C GT (T + Gate +, T - Gate -) Quads I and III . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max 2 2 (T + Gate -, T - Gate +) Quads II and IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Max 2 2 DC Gate-Trigger Voltage (V = 12VDC, R = 30, T = +25C), V . . . . . . . . . . . . . . . . 2.5V Max D L C GT Gate-Controlled Turn-On Time, T gt (V = 400V, I = 200mA, t = 0.1s, I = 10A (Peak), T = +25C) . . . . . . . . . . . . . . . . . 3 s D GT R T C Note 1. All values apply in either direction.Gate MT 1 MT 2 .610 (15.49) Max .650 (16.5) Max .385 (9.76) Max .508 (12.9) Max