NTE388 (NPN) & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: High Safe Operating Area: 2A 80V High DC Current Gain: h = 15 Min I = 8A FE C Absolute Maximum Ratings: CollectorEmitter Voltage, V . 250V CEO CollectorEmitter Voltage, V . 400V CEX CollectorBase Voltage, V 400V CBO EmitterBase Voltage, V 5V EBO Collector Current, I C Continuous 16A Peak (Note 2) 30A Continuous Base Current, I 5A B Total Power Dissipation (T = +25C), P . 250W C D Derate Above 25C 1.43W/C Operating Junction Temperature Range, T 65 to +200C J Storage Temperature Range, T 65 to +200C stg Thermal Resistance, JunctiontoCase, R 0.70C/W thJC Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 3 250 V CEO(sus) C B Collector Cutoff Current I V = 250V, V = 1.5V 250 A CEX CE BE(off) I V = 200V, I = 0 500 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 500 A EBO EB C Second Breakdown I V = 50V, t = 0.5s (nonrepetitive) 5 A Second Breakdown Collector Current S/b CE with Base Forward Bias V = 80V, t = 0.5s (nonrepetitive) 2 A CE ON Characteristics DC Current Gain h V = 4V, I = 8A 15 60 FE CE C V = 4V, I = 16A 5 CE C CollectorEmitter Saturation Voltage V I = 8A, I = 800mA 1.4 V CE(sat) C B I = 16A, I = 3.2A 4.0 V C B BaseEmitter On Voltage V V = 4V, I = 8A 2.2 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 1A, f = 1MHz 4 MHz T CE C test Output Capacitance C V = 10V, I = 0, f = 1MHz 500 pF ob CB E test Note 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case