NTE99 Silicon NPN Transistor w Darlington /BaseEmitter Speedup Diode TO3 Type Package Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. This device is particularly suited for lineoperated switchmode applications. Applications: Switching Regulators Motor Controls Inverters Solenoid and Relay Drivers Features: Fast TurnOff Times: 1.0 s (max) Inductive Crossover Time 20 Amps 2.5 s (max) Inductive Storage Time 20 Amps Operating Temperature Range: 65 to +200C Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 400V CEO CollectorEmitter Voltage, V ..................................................... 600V CEV EmitterBase Voltage, V ........................................................... 8V EB Collector Current, I C Continuous .................................................................. 50A Peak (Note 1) ................................................................ 75A Base Current, I B Continuous .................................................................. 10A Peak (Note 1) ................................................................ 15A Total Power Dissipation, P D T = +25C ................................................................ 250W C Derate Above 25 C ...................................................... 1.43W/ C T = +100C ............................................................... 143W C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R ..................................... 0.7 C/W thJC Maximum Lead Temperature (During Soldering, 1/8 from case for 5sec), T ............ +275 C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Rev. 316Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, V = 400V 400 V CEO(sus) C B clamp Collector Cutoff Current I V = 600V, V = 1.5V 0.25 mA CEV CEV BE(off) Emitter Cutoff Current I V = 2V, I = 0 350 mA EBO BE C ON Characteristics (Note 2) DC Current Gain h I = 20A, V = 5V 25 FE C CE I = 40A, V = 5V 10 C CE CollectorEmitter Saturation Voltage V I = 20A, I = 1A 2.2 V CE(sat) C B I = 50A, I = 10A 5.0 V C B BaseEmitter Saturation Voltage V I = 20A, I = 1A 2.75 V BE(sat) C B Diode Forward Voltage V I = 20A, Note 3 2.5 5.0 V f F Dynamic Characteristic Output Capacitance C V = 10V, I = 0, f = 100kHz 750 pF ob CB E test Switching Characteristics Resistive Load Delay Time t V = 250V, I = 20A, 0.14 0.3 s d CC C I = 1A, V = 5V, B1 BE(off) Rise Time t 0.3 1.0 s r t = 25s, Duty Cycle 2% p Storage Time t 0.8 2.5 s s Fall Time t 0.3 1.0 s f Inductive Load, Clamped Storage Time t 1.0 2.5 s I = 20A(pk), V = 250V, sv C clamp I = 1A, V = 5V B1 BE(off) Crossover Time t 0.36 1.0 s c Note 2. Pulse Test: Pulse Widtg = 300s, Duty Cycle 2%. Note 3. The internal Collector toEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V ) of this f diode is comparable to that of typical fast recovery rectifiers. Circuit Outline C B 50 8 E