IL800-Series Isolators DC-Correct High Speed Digital Isolators Functional Diagrams Features DC-correct 40C to 125C operating temperature 110 Mbps 10 ns propagation delay 1.3 mA/channel typical quiescent current 50 kV/ s typ. 30 kV/ s min. common mode transient immunity IL810 600 V working voltage per VDE V 0884-10 RMS 44000 year barrier life 3 V to 5 V power supplies IL814 Low EMC footprint 8-pin MSOP and SOIC packages for one and two channels 16-pin QSOP, 0.15 SOIC, and 0.3 True 8 SOIC for 3 and 4 channels IEC 60747-5-5 (VDE 0884) certified UL 1577 recognized Applications IL811 ADCs and DACs Digital Fieldbus RS-485 and RS-422 Multiplexed data transmission Data interfaces Board-to-board communication Digital noise reduction IL815 IL821 Ground loop elimination Peripheral interfaces Parallel bus Logic level shifting Description IL800-Series isolators are high-speed, high temperature dc-correct isolators. An internal refresh clock ensures the outputs respond to dc states on inputs within a maximum of 9 s. The devices use NVEs patented* IsoLoop spintronic Giant Magnetoresistive (GMR) technology. IL816 A unique ceramic/polymer composite barrier provides excellent isolation and virtually unlimited barrier life. IL817 IsoLoop is a registered trademark of NVE Corporation. REV. J *U.S. Patent numbers 5,831,426 6,300,617 and others. NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.IsoLoop.com NVE Corporation IL800-Series Isolators (1) Absolute Maximum Ratings Parameters Symbol Min. Typ. Max. Units Test Conditions Storage Temperature T 55 150 C S Ambient Operating Temperature T 40 125 C A Supply Voltage V , V 0.5 7 V DD1 DD2 Input Voltage V 0.5 V+0.5 V I DD Output Voltage V 0.5 V+0.5 V O DD Output Current Drive I 10 mA O Lead Solder Temperature 260 C 10 sec. ESD 2 kV HBM Recommended Operating Conditions Parameters Symbol Min. Typ. Max. Units Test Conditions Ambient Operating Temperature T 40 125 C A Supply Voltage V , V 3.0 5.5 V DD1 DD2 Logic High Input Voltage V 2.4 V V IH DD Logic Low Input Voltage V 0 0.8 V IL (10) Input Signal Rise and Fall Times t , t DC-Correct IR IF Insulation Specifications Parameters Symbol Min. Typ. Max. Units Test Conditions MSOP 3.0 Creepage QSOP 4.03 Distance mm Per IEC 60601 0.15 SOIC (8 or 16 pin) 4.03 (external) 0.3 SOIC 8.03 8.3 Total Barrier Thickness (internal) 0.012 0.013 mm Leakage Current 0.2 A 240 V , 60 Hz RMS 14 Barrier Resistance R >10 500 V IO Barrier Capacitance C 4 pF f = 1 MHz IO Comparative Tracking Index CTI 175 V Per IEC 60112 High Voltage Endurance AC 1000 V RMS At maximum (Maximum Barrier Voltage V IO operating temperature for Indefinite Life) DC 1500 V DC 100C, 1000 V , 60% RMS Barrier Life 44000 Years CL activation energy Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions QSOP 60 JunctionAmbient 0.15 SOIC 60 C/W JA Thermal Resistance Soldered to double- 0.3 SOIC 60 sided board QSOP 10 JunctionCase (Top) free air 0.15 SOIC 10 C/W JT Thermal Resistance 0.3 SOIC 20 QSOP 675 Power Dissipation 0.15 SOIC P 700 mW D 0.3 SOIC 800 2 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 Fax: (952) 829-9189 www.IsoLoop.com NVE Corporation