DISCRETE SEMICONDUCTORS
DDATA SHEET
BTA212 series B
Three quadrant triacs
high commutation
September 1997
Product specification
Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
foruse incircuits wherehigh staticand BTA212- 500B 600B 800B
dynamic dV/dt and high dI/dt can V Repetitive peak off-state 500 600 800 V
DRM
occur. These devices will commutate voltages
the full rated rms current at the I RMS on-state current 12 12 12 A
T(RMS)
maximum rated junction temperature, I Non-repetitive peak on-state 95 95 95 A
TSM
without the aid of a snubber. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
tab
1 main terminal 1
T2 T1
2 main terminal 2
3 gate
G
123
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
1 1
V Repetitive peak off-state - 500 600 800 V
DRM
voltages
I RMS on-state current full sine wave; - 12 A
T(RMS)
T 99 C
mb
I Non-repetitive peak full sine wave;
TSM
on-state current T = 25 C prior to
j
surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
2 2 2
ItI t for fusing t = 10 ms - 45 A s
dI /dt Repetitive rate of rise of I = 20 A; I = 0.2 A; 100 A/s
T TM G
on-state current after dI /dt = 0.2 A/s
G
triggering
I Peak gate current - 2 A
GM
V Peak gate voltage - 5 V
GM
P Peak gate power - 5 W
GM
P Average gate power over any 20 ms - 0.5 W
G(AV)
period
T Storage temperature -40 150 C
stg
T Operating junction - 125 C
j
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.
September 1997 1 Rev 1.200