DocumentNumber:AFT05MS006N FreescaleSemiconductor Rev. 0, 2/2014 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT05MS006NT1 Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device make it ideal for large--signal, common--source amplifier applications in handheldradioequipment. 136941MHz,6.0W,7.5V NarrowbandPerformance (7.5Vdc,I =100mA,T =25 C,CW) DQ A WIDEBAND RFPOWERLDMOSTRANSISTOR Frequency G P ps D out (MHz) (dB) (%) (W) (1) 520 18.3 73.0 6.0 Wideband Performance (7.5 Vdc, T =25 C, CW) A Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) 136174 0.19 15.5 60.0 6.0 (2) PLD--1.5W 440--520 0.15 16.3 65.0 6.4 (3) 760--870 0.20 15.2 58.5 6.7 LoadMismatch/Ruggedness Frequency Signal P Test in (MHz) Type VSWR (W) Voltage Result (1) 520 CW >65:1atall 0.12 10.8 NoDevice Gate Drain PhaseAngles (3dB Overdrive) Degradation 1. Measuredin520MHz narrowbandtestcircuit. 2. Measuredin440520MHz UHFbroadbandreferencecircuit. 3. Measuredin760870MHz UHFbroadbandreferencecircuit. Note: Thecenterpadonthebacksideof thepackageis thesourceterminal forthetransistor. Features Characterizedfor Operationfrom 136to941MHz Figure1.PinConnections UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband FullPower Across theBand ExceptionalThermalPerformance ExtremeRuggedness HighLinearity for: TETRA, SSB InTapeandReel. T1Suffix = 1,000Units, 16mm TapeWidth, 7--inchReel. TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700800MHz HandheldRadio FreescaleSemiconductor, Inc., 2014. All rights reserved. AFT05MS006NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+30 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS OperatingVoltage V 12.5,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+150 C J TotalDeviceDissipation T =25 C P 125 W C D Derateabove25 C 1.0 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.0 C/W JC CaseTemperature79C,6.0W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) A,passes 150V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.2 2.6 Vdc GS(th) (V =10Vdc,I =78 Adc) DS D Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =0.78Adc) GS D ForwardTransconductance g 4.4 S fs (V =7.5Vdc,I =4.7Adc) DS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat