Product Information

BAS116T

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DIODE, SWITCHING, SC75

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.0597 ea
Line Total: USD 0.06

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 16 May to Wed. 22 May MOQ : 1 Multiples : 1 BAS116T NXP	1 : USD 0.0597 10 : USD 0.0567 25 : USD 0.0454 100 : USD 0.0401 250 : USD 0.0386 500 : USD 0.0378

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Additional Infomation About Product

BAS116T Single low leakage current switching diode Rev. 2 9 July 2012 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High switching speed: t =0.8 s Low capacitance: C =2pF rr d Low leakage current: 3 pA Reverse voltage: V 75 V R Repetitive peak reverse voltage: Ultra small SMD plastic package V 85 V RRM AEC-Q101 qualified 1.3 Applications Low leakage current applications Voltage clamping General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 I forward current -- 215 mA F I reverse current V =75V - - 5 nA R R V reverse voltage - - 75 V R 2 t reverse recovery time -- 3 s rr 1 Pulse test: t 300 s 0.02. p 2 When switched from I = 10 mA to I =10mA R = 100 measured at I =1mA. F R L R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 anode 3 3 2 not connected 12 3 cathode 006aaa764 12 SOT416BAS116T NXP Semiconductors Single low leakage current switching diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116T SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code BAS116T ZY 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -85 V RRM voltage V reverse voltage - 75 V R 1 I forward current -215 mA F I repetitive peak forward -500 mA FRM current 2 I non-repetitive peak square wave FSM forward current t =1 s-4A p t =1ms - 1 A p t =1s - 0.5 A p 3 P total power dissipation T 25 C -150 mW tot amb T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Pulse test: t 300 s 0.02. p 2 T =25 C before surge. j 3 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116T All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 9 July 2012 2 of 10

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Manufacturer NXP NXP
Product Category Unclassified Unclassified
Diode Configuration Single Single
Repetitive Reverse Voltage Vrrm Max 85 V 85 V
Forward Current Ifav 215 mA 215 mA
Forward Voltage Vf Max 1.25 V 1.25 V
Reverse Recovery Time Trr Max 3Μs 3Μs
Forward Surge Current Ifsm Max 4 A 4 A
Operating Temperature Max 150 C 150 C
Diode Case Style Sc - 75 Sc - 75
No Of Pins 3 3
Packaging Each Each
Svhc No Svhc (15 - Jun - 2015) No Svhc (15 - Jun - 2015)
Diode Type Switching Switching
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C To + 155 C - 55 C To + 155 C