Product Information

BB149,115

BB149,115 electronic component of NXP

Datasheet
Diode VAR Cap Single 30V 18pF 2-Pin SOD-323 T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

186: USD 0.1215 ea
Line Total: USD 22.6

0 - Global Stock
MOQ: 186  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Minimum Tuning Ratio
Factory Pack Quantity :
Tuning Ratio Test Condition
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BB149 UHF variable capacitance diode Rev. 6 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB149 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 (SC-76) very small SMD plastic package. The excellent matching performance is achieved by gliding matching and a Direct Matching Assembly (DMA) procedure. The unmatched type, BB159 has the same specification. 1.2 Features and benefits Excellent linearity Excellent matching to 1 % DMA Very small SMD plastic package C : 2.1 pF C to C ratio: 9 d(28V) d(1V) d(28V) Low series resistance. 1.3 Applications Electronic tuning in UHF television tuners Voltage Controlled Oscillators (VCO). 2. Pinning information Table 1. Pinning 1 Pin Description Simplified outline Symbol 1 cathode 1 2 2 anode sym008 1 Marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB149 SC-76 plastic surface mounted package 2 leads SOD323BB149 NXP Semiconductors UHF variable capacitance diode 4. Marking Table 3. Marking Type number Marking code BB149 P9 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 20 mA F T storage temperature 55 +150 C stg T junction temperature 55 +125 C j 6. Characteristics Table 5. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit I reverse current see Figure 2 R V =30V - - 10 nA R V =30V T =85 C - - 200 nA R j 1 r diode series f = 470 MHz - - 0.75 s resistance C diode f = 1 MHz see Figure 1 and 3 d capacitance V =1V 18 - 19.5 pF R V = 28 V 1.9 2.1 2.25 pF R capacitance ratio f = 1 MHz 8.2 9 10 C d1V ------------------ C d28V capacitance ratio f = 1 MHz 1.2 - - C d19V ------------------ C d28V capacitance V = 0.5 V to 28 V in a -- 2 % R C d ---------- matching sequence of 10 diodes C d (gliding) 1 V is the value at which C =9pF. R d BB149 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 5 September 2011 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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