Product Information

BB179BLX,315

Product Image X-ON

Datasheet
UHF VARIABLE CAPACITANCE DIODE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.95 ea
Line Total: USD 47.5

0 - Global Stock
MOQ: 50  Multiples: 1
Pack Size: 1
     
Manufacturer
NXP
Product Category
Varactor Diodes
RoHS - XON
Y Icon ROHS
Capacitance
20 pF
Vr - Reverse Voltage
32 V
If - Forward Current
20 mA
Mounting Style
Smd/Smt
Termination Style
Smd/Smt
Package / Case
SOD - 882T
Configuration
Single
Packaging
Reel
Brand
Nxp Semiconductors
Minimum Tuning Ratio
8.45
Factory Pack Quantity :
10000
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BB179BLX UHF variable capacitance diode Rev. 2 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB179BLX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package. The excellent matching performance is achieved by gliding matching and a Direct Matching Assembly (DMA) procedure. 1.2 Features and benefits Excellent linearity Excellent matching to 2 % DMA Ultra small leadless SMD package C :2.1 pF; C to C ratio typical 9 d(28V) d(1V) d(28V) Low series resistance 1.3 Applications Voltage Controlled Oscillators (VCO) Electronic tuning in UHF television tuners 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol [1] 1 cathode 2 anode 1 2 sym008 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB179BLX - leadless ultra small plastic package; 2 terminals; SOD882T body 1.0 0.6 0.4 mmBB179BLX NXP Semiconductors UHF variable capacitance diode 4. Marking Table 3. Marking codes Type number Marking code BB179BLX L5 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 32 V R I forward current - 20 mA F T storage temperature 55 +150 C stg T junction temperature 55 +125 C j 6. Characteristics Table 5. Characteristics Symbol Parameter Conditions Min Typ Max Unit I reverse current see Figure 3 R V =30V - - 10 nA R V =30V; T =85 C - - 200 nA R j r diode series resistance f = 470 MHz at C =9pF; -0.65- s d see Figure 2 C diode capacitance f = 1 MHz; see Figure 1 and d Figure 4 V = 1 V 18.22 - 20 pF R V = 28 V 1.9 2.1 2.25 pF R C /C diode capacitance ratio (1 V to 2 V) f = 1 MHz - 1.27 - d(1V) d(2V) C /C diode capacitance ratio (1 V to 28 V) f = 1 MHz 8.45 9 10.9 d(1V) d(28V) C /C diode capacitance ratio (25 V to 28 V) f = 1 MHz - 1.05 - d(25V) d(28V) C /C diode capacitance matching V = 1 V to 28 V; in sequence of -- 2 % d d R 5 diodes (gliding) BB179BLX All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 5 September 2011 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI