BF996S,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS VHF applications such as: handbook, halfpage d 43 VHF television tuners Professional communication equipment. g 2 g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 1s, b source s,b 2 d drain Top view MAM039 3g gate 2 2 Marking code: MGp. 4g gate 1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage 20 V DS I drain current 30 mA D P total power dissipation up to T =60 C 200 mW tot amb T junction temperature 150 C j Y transfer admittance f = 1 kHz I =10mA V =15V V =4V 18 mS D DS G2-S fs C input capacitance at gate 1 f = 1 MHz I =10mA V =15V V =4V 2.5 3 pF ig1-s D DS G2-S C feedback capacitance f = 1 MHz I =10mA V =15V V =4V 25 fF rs D DS G2-S F noise figure f = 200 MHz G =2mS B =B 1 dB S S Sopt I =10mA V =15V V =4V D DS G2-S July 1993 2