BGA2716,115

BGA2716 MMIC wideband amplifier Rev. 3 8 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Internally matched to 50 Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 23 dB gain (1 dB up to 2.7 GHz) 9 dBm output power at 1 dB compression point Good linearity for low current (IP3 = 22 dBm) out Low second harmonic 38 dBc at P = 5 dBm L Unconditionally stable (K 1.2). 1.3 Applications LNB IF amplifiers Cable systems ISM General purpose. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DC supply voltage - 5 6 V S I supply current - 15.9 - mA S 2 s insertion power gain f = 1 GHz - 22.9 - dB 21 NF noise figure f = 1 GHz - 5.3 - dB P saturated load power f = 1 GHz - 11.6 - dBm L(sat)BGA2716 NXP Semiconductors MMIC wideband amplifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1V S 6 5 4 1 2, 5 GND2 3RF OUT 6 3 4 GND1 4 2, 5 132 6RF IN sym052 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGA2716 - plastic surface mounted package 6 leads SOT363 4. Marking Table 4. Marking Type number Marking code BGA2716 B7- 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V DC supply voltage RF input AC -6 V S coupled I supply current - 30 mA S P total power dissipation T 90 C- 200mW tot sp T storage temperature 65 +150 C stg T junction temperature - 150 C j P maximum drive power - 10 dBm D BGA2716 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 8 September 2011 2 of 15